Toshiba, SanDisk 15nm MLC/TLC NAND

Partners Toshiba and SanDisk have developed 15-nanometer process technology for NAND flash memory...will replace the second-generation 19-nm process technology when production begins at Toshiba’s plant in Yokkaichi, Japan, Toshiba said. 

More below.

Ron

Insightful, timely, and accurate semiconductor consulting.
Semiconductor information and news at - http://www.maltiel-consulting.com/

Toshiba, SanDisk start mass production of 15nm NAND memory

April 23rd, 2014 at 11:05 am - AuthorAnton Shilov

Toshiba Corp. and SanDisk Corp. on Wednesday said that they would start to produce multi-level cell (MLC) NAND flash memory using 15nm fabrication process later in April. The new manufacturing technology allows Toshiba to make world’s smallest and potentially cost-efficient 128Gb NAND flash memory.

Initially, Toshiba and SanDisk will produce 128Gb MLC (two-bits-per-cell) MLC NAND flash memory using the 15nm process technology at Fab 5 phase one, where the fabrication tech will replace the companies’ second-gen 19nm manufacturing process. The phase stage of Fab 5 is currently under construction, and the new technology will also be deployed there.

The new 128Gb MLC NAND flash chips achieve the same write speed as chips formed with second generation 19nm process technology, but boost the data transfer rate to 533Mb/s, 30 per cent faster, by employing a higher speed interface.

Toshiba claims that it had achieved the world’s smallest class chip size with the 15nm process and improved peripheral circuitry technology.

According to SanDisk, the 15nm technology uses numerous progressive process innovations and cell-design solutions to scale the chips along both axes. SanDisk’s All-Bit-Line (ABL) architecture, which contains proprietary programming algorithms and multi-level data storage management schemes, has been implemented in the 1Z technology to deliver NAND flash solutions with no sacrifice in memory performance or reliability. SanDisk’s 1Z technology will be utilized across its broad range of solutions, from removable cards to enterprise SSDs.

Separately, Toshiba announced that it would use the 15nm fabrication process to produce triple-level-cell (TLC, three-bits-per-cell, 3bpc) NAND flash memory. Such memory, provided that the yields are sufficient, will be the world’s most cost-efficient NAND flash. The company aims to start mass production of TLC NAND using 15nm process in June, 2014.

The company intends to develop controllers for 3bpc embedded NAND flash memory in parallel and introduce TLC NAND products for smartphones and tablets. Eventually Toshiba will use 15nm TLC NAND with special controllers for solid-state drives.

Toshiba and SanDisk run joint NAND flash manufacturing operations in Japan.

KitGuru Says: If Toshiba and SanDisk manage to sustain 3000 write/erase cycles with 15nm MLC NAND (typical amount of cycles sustained by modern MLC), then the new memory type will enable lower-cost SSDs already this year. In case the new type of memory (like 15nm TLC NAND) requires new controllers, then its adoption will take time.

Hynix DRAM (Wuxi) Production

Hynix DRAM production was mentioned in an announcement of introduction of the 64Gb (gigabit) multi-level cell (MLC) NAND FLASH using the 16-nanometer micro fabrication process technology.
“The equipment, not directly damaged by the fire, requires a lot of work before it can be used again in the production line,” said an industry official. “It will not be as easy to normalize the Wuxi plant as originally thought.”

Fab equipment has to be meticulously cleaned before it can be put back in production. You have to make sure running the equipment would not produce particles. In addition every piece of equipment impacted by the fire need to be recalibrated.

Hynix also mentioned:

"SK Hynix raised the production capacity of the Icheon DRAM plant by 30% after the fire in the Wuxi plant in China. Early next year the company is considering making additional investments to extend the Icheon plant."

I am not clear how they can raise production 30% very quickly. They can shrink product masks set, improve production process, or buy new equipment. Each one will take several months to implement.

 

Ron

Insightful, timely, and accurate semiconductor consulting.

Semiconductor information and news at - http://www.maltiel-consulting.com/

SK Hynix concentrates investment in the microfabrication process…in a bid to chase ‘two hares’ at a time

2013/11/21 By Lee Hyeong-soo

SK Hynix (CEO Park Seong-wook) announced on November 20 that it began to produce the 64Gb (gigabit) multi-level cell (MLC) NAND FLASH using the 16-nanometer microfabrication process technology. 

It also completed the development of the 128Gb (16GB) package. It is the largest single 16-nanometer 64Gb MLC NAND FLASH chip. SK Hynix is planning to begin mass production of this product early next year. 
In general, as the microfabrication process intensifies, the interference between memory cells takes place. SK Hynix overcame the inter-cell interference during the 16-nanometer microfabrication process by applying the air gap technology, which fills the space between circuits with air, not an insulating material. 

SK Hynix is planning to convert the DRAM microfabrication process from upper 20-nanometer to lower 20-nanometer. Its strategy is to increase the global market share while raising the DRAM production capacity at the same time through the microfabrication process conversion. It is also reinforcing its product portfolio by concentrating on development of the triple-level cell (TLC) and 3D NAND FLASH. 

“We became the first in the world to commercialize the 16-nanometer microfabrication process technology, and completed the development of the 128Gb MLC product,” said Kim Jin-woong, head of the SK Hynix Flash Tech Innovation Division. “We can secure powerful competiveness in the NAND FLASH market.” 

SK Hynix seems to be concentrating on microfabrication process conversion because it intends to keep growing stably rather than impractical technology conversion. The top management, including CEO Park Seong-wook, is confident that it will not be behind Samsung Electronics as far as the microfabrication process technology is concerned. 

The recent fire in the Wuxi plant in China greatly influenced next year’s business strategy. SK Hynix believes that it is unreasonable to seek rapid changes, such as production of 3D semiconductors, when one of its global production bases, i.e. the Wuxi plant, is unstable. 

SK Hynix raised the production capacity of the Icheon DRAM plant by 30% after the fire in the Wuxi plant in China. Early next year the company is considering making additional investments to extend the Icheon plant. The Wuxi plant was expected to be normalized sometime this month, but there is a possibility of delay. 

SK Hynix is focused on recovering the production capacity while concentrating on investing in the Icheon DRAM line for the time being. If the microfabrication process conversion is successful, it will be able to achieve 7~8%ish growth next year without any additional investment in equipment. As the DRAM price skyrocketed, the fire of the Wuxi plant did not cause much financial damage, but if it does not defend the market share to a certain extent, it may boomerang in the future. DRAM also looks attractive in terms of profits. As the short supply continues, the DRAM price is continuously rising. 

“The equipment, not directly damaged by the fire, requires a lot of work before it can be used again in the production line,” said an industry official. “It will not be as easy to normalize the Wuxi plant as originally thought.” 

Lee Hyeong-soo | goldlion2@etnews.com