IBM: Fab Future Beyond FinFETs

The Common Technology Platform and other vendors have been lagging Intel in process development and  integration for several years. In a recent Common Platform Technology Forum, IBM presented their latest effort to catch up - vision of Fab future.
"IBM spotlights double patterning tricks with immersion lithography, showed advances in fully depleted silicon-on-insulator".

 "IBM, GloFo and Samsung now claim they have the lion's share of today's 32/28 nm, high-K metal gate capacity."
While they are claiming to have the fab capacity lead for 28nm HKMG process, Intel, TSMC, and other foundries would feel differently.

Ron
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