Monday, October 28, 2013

DDR4- Latest DRAM is Here
On May 2012 Micron announced DDR4 samples - First DDR4 DRAM from Micron

More about DDR4 at Why migrate to DDR4?
  • "Improved capacity and performance scalability: 
DDR4 is organized differently from DDR3—specifically in the area of how DDR4 is designed to support high-speed multi-core processors. The 8-Gb DDR4 SDRAM device with 4-bit-wide data bus interface (x4), for example, is internally organized as a device with four bank groups and four banks in each bank group...
  • Improved power efficiency:
Aside from further reducing the DRAM I/O voltage (VDDQ) from 1.35 V used by DDR3L DRAM devices to 1.2 V, the DDR4 SDRAM device also specifies that a separate VPP voltage supply be provided to support high DRAM core word line voltage requirements...
  • Improved reliability, availability and serviceability (RAS):

 DDR4 SDRAM specification improves RAS is that DDR4 device supports command and address parity error detection, as well as recovery from parity error...supports a connectivity test mode, so that a system controller can test and detect connectivity faults without needing to go through DRAM initialization sequencing...The DDR4 register also provides enhanced RAS over the DDR3 register in that the DDR4 register can be configured to support command blocking upon detection of a parity error.."

It will still be awhile before DDR4 will replace DDR3.

Insightful, timely, and accurate semiconductor consulting.
Semiconductor information and news at -


Kristin Lewotsky
10/17/2013 10:30 AM EDT 

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