Andrew Walker at 3dincites.com analyzes Samsung 3D V-NAND below.
|Andrew Walker's vertical channel 3D NAND based on Chipworks’ cross section of Samsung’s 86 Gbit 32-layer 2nd generation V-NAND|
The article below calculate cell size based on Techinsights teardown and wonders about benefits of this technology. However, there are key benefits for Samsung due to the difference in yield and cost of increasing the number of CVD layers vs reducing photolithography layers and masks cost and the associate increase in yield.
More from November 2012 - 3D NAND flash is coming
A 2009 patent application by Samsung for this technology is - US20100155810
Insightful, timely, and accurate semiconductor consulting.
Semiconductor information and news at - http://www.maltiel-consulting.com/