Wednesday, January 30, 2013
Where is DRAM Innovation?
The article, Hynix 30 nm DRAM layout, process integration adapt to change , discusses advances in DRAM memory at Hynix. DRAM memory has not been able to shrink the memory cell as quickly as flash memory. Leading edge flash memory products with dimensions around 20nm or less are being introduced to production, while DRAM memory is still above 30nm (see figure 4 in the article below).
While flash memory has a key advantage of keeping the information even without power, there is still a place for DRAM memory. Many of the process technology advances are being implemented at a slower rate in DRAM production. However major memory cell and circuit improvements are not being pursued. For example, storing multiple bites in one physical flash memory cell has been done for several years. There are 3-bit-per-cell (TLC) NAND and 2-bit-per-cell (MLC) flash available in the market, but there is no DRAM product with multiple bits in the same cell.
Insightful, timely, and accurate semiconductor consulting.
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