Tuesday, February 12, 2013

IBM: Fab Future Beyond FinFETs

The Common Technology Platform and other vendors have been lagging Intel in process development and  integration for several years. In a recent Common Platform Technology Forum, IBM presented their latest effort to catch up - vision of Fab future.
"IBM spotlights double patterning tricks with immersion lithography, showed advances in fully depleted silicon-on-insulator".

 "IBM, GloFo and Samsung now claim they have the lion's share of today's 32/28 nm, high-K metal gate capacity."
While they are claiming to have the fab capacity lead for 28nm HKMG process, Intel, TSMC, and other foundries would feel differently.

Insightful, timely, and accurate semiconductor consulting.
Semiconductor information and news at - http://www.maltiel-consulting.com/

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