vision of Fab future.
"IBM spotlights double patterning tricks with immersion lithography, showed advances in fully depleted silicon-on-insulator".
"IBM, GloFo and Samsung now claim they have the lion's share of today's 32/28 nm, high-K metal gate capacity."
While they are claiming to have the fab capacity lead for 28nm HKMG process, Intel, TSMC, and other foundries would feel differently.
Insightful, timely, and accurate semiconductor consulting.
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